Перегляд за автором "Motsnyi, F.V."

Результати 1-7 з 7

Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface

Dorogan, V.G.; Zhydkov, V.O.; Motsnyi, F.V.; Smolanka, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and ...
Effect of temperature variation on shift and broadening of exciton band in Cs₃Bi₂I₉ layered crystals

Machulin, V.F.; Motsnyi, F.V.; Peresh, E.Yu.; Smolanka, O.M.; Svechnikov, G.S. (Физика низких температур, 2004)

The exciton reflection spectra of Cs₃Bi₂I₉ layered crystals is investigated in the temperature region 4.2–300 K with light polarization E ⊥ c. It is estimated that the energy gap Eg equals 2.857 eV (T = 4.2 K) and the ...
Influence of Mn and Cr impurities on quasi-surface exciton states of BiI₃ layered single crystals

Dorogan, V.G.; Zhydkov, V.O.; Motsnyi, F.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The influence of Mn and Cr impurities on quasi-surface excitons of BiI3 single crystals was studied. The broadening of their band was found which may be caused by ionization of quasi-surface excitons by the electric field ...
Phase transition in Cs₃Bi₂I₉ ferroelastic: investigation by Raman scattering technique

Motsnyi, F.V.; Vuychik, M.V.; Smolanka, O.M.; Peresh, E.Yu. (Functional Materials, 2005)

Raman scattering in unpolarized light has been studied for the first time for Cs₃Bi₂I₉ layered ferroelastic at temperatures from 5 to 300 К in the heating mode. Neither soft mode nor frequency softening was ...
Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals

Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)

The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
Saddle point excitonic resonances in BiI3 layered single crystals

Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
Study of supercapacitors with a double electrical layer based on activated carbon materials

Budzulyak, I.M.; Kovalyuk, Z.D.; Motsnyi, F.V.; Orletskyi, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

It is proposed ecologically pure technology to obtain activated carbon. On the base of this carbon the supercapacitors were manufactured. Their characteristics were determined and compare with analogs obtained using ...

Результати 1-7 з 7

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Перегляд за автором "Motsnyi, F.V."

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